DocumentCode
2023166
Title
Power gain analysis of SiGe HBTs with constant Ge strain
Author
Jiang, Ningyue ; Ma, Zhenqiang
Author_Institution
Dept. of Electr. & Comput. Eng., Wisconsin-Madison Univ., Madison, WI, USA
fYear
2005
fDate
3-4 Oct. 2005
Firstpage
153
Lastpage
156
Abstract
The power gain of SiGe HBTs with constant total Ge content (strain) but different doping profiles is studied under common-emitter (CE) and common-base (CB) configurations. It is found that CE and CB configurations show different power gain sensitivity on doping concentration and bias condition. The sensitivity of f/sub max/ on Ge profile and doping profile is also investigated.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; semiconductor doping; semiconductor materials; sensitivity analysis; HBT; SiGe; bias condition; common-base configurations; common-emitter configurations; doping concentration; doping profiles; power gain analysis; power gain sensitivity; Capacitive sensors; Doping profiles; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave amplifiers; Microwave devices; Power engineering and energy; Radiofrequency amplifiers; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location
Paris
Print_ISBN
88-902012-0-7
Type
conf
Filename
1637173
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