DocumentCode
2023174
Title
Evaluation of Non-Linear Functional Equivalent Circuit Models for a GaAs MESFET, and Their Application to Optimum Power Amplifier Design
Author
Brazil, T.J.
Author_Institution
Department of Electronic Engineering, University College Dublin, Ireland
fYear
1986
fDate
8-12 Sept. 1986
Firstpage
195
Lastpage
200
Abstract
Three different non-linear equivalent circuit models are developed for the GaAs MESFET, based on Y-parameters, S-parameters, and a hybrid parameter system. A comparison is carried out between the optimum added-power conditions predicted by each model for a single-frequency power amplifier, and the predictions are also tested against a full time-domain analysis of the amplifier.
Keywords
Broadband amplifiers; Circuit simulation; Equivalent circuits; Frequency; Gallium arsenide; MESFET circuits; Power amplifiers; Power system modeling; Scattering parameters; Time domain analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1986. 16th European
Conference_Location
Dublin, Ireland
Type
conf
DOI
10.1109/EUMA.1986.334193
Filename
4133676
Link To Document