DocumentCode :
2023174
Title :
Evaluation of Non-Linear Functional Equivalent Circuit Models for a GaAs MESFET, and Their Application to Optimum Power Amplifier Design
Author :
Brazil, T.J.
Author_Institution :
Department of Electronic Engineering, University College Dublin, Ireland
fYear :
1986
fDate :
8-12 Sept. 1986
Firstpage :
195
Lastpage :
200
Abstract :
Three different non-linear equivalent circuit models are developed for the GaAs MESFET, based on Y-parameters, S-parameters, and a hybrid parameter system. A comparison is carried out between the optimum added-power conditions predicted by each model for a single-frequency power amplifier, and the predictions are also tested against a full time-domain analysis of the amplifier.
Keywords :
Broadband amplifiers; Circuit simulation; Equivalent circuits; Frequency; Gallium arsenide; MESFET circuits; Power amplifiers; Power system modeling; Scattering parameters; Time domain analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1986. 16th European
Conference_Location :
Dublin, Ireland
Type :
conf
DOI :
10.1109/EUMA.1986.334193
Filename :
4133676
Link To Document :
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