RF characteristics of BJT devices with selectively or fully ion-implanted collector

Author

Meng, C.C. ; Su, J.Y. ; Tsou, B.C. ; Huang, G.W.

Author_Institution

Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

161

Lastpage

164

Abstract

A selectively ion-implanted collector (SIC) is implemented in a 0.8 /spl mu/m BiCMOS process to improve the RF characteristics of the BJT devices. The SIC BJT device has better ft and fmax than the FIC (fully ion-implanted collector) BJT device because the extrinsic base-collector capacitance is reduced by the SIC process. The fmax is 9.5 GHz and ft is 7.8 GHz for the SIC BJT device while the fmax is 7.2 GHz and fmax is 4.5 GHz for the FIC BJT device when biased at Vce=3.6 V and Jc=0.09 mA//spl mu/m/sup 2/. The noise parameters are the same for both BJT devices but the associated gain is higher for the SIC BJT device.

Keywords

BiCMOS integrated circuits; microwave bipolar transistors; 0.8 mum; 3.6 V; 4.5 GHz; 7.2 GHz; 7.8 GHz; 9.5 GHz; BJT devices; BiCMOS process; RF characteristics; extrinsic base-collector capacitance; fully ion-implanted collector; noise parameters; selectively ion-implanted collector; BiCMOS integrated circuits; Bipolar transistor circuits; Capacitance; Capacitors; Circuit noise; Fingers; Ion implantation; Laboratories; Radio frequency; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637175