Title :
Ultra-low voltage normally-off lateral SIT device for RF mobile applications
Author :
Xu, Shuming ; Liang, Yung C. ; Lim, Chow Yee ; Tien, Dapeng
Author_Institution :
Vishay Siliconix, Santa Clara, CA, USA
Abstract :
In this paper, a new lateral SIT (static induction transistor) structure is proposed which is suitable for low-voltage mobile applications. The structure is normally off when no gate bias is applied. The new structure has very low parasitic capacitance on the oxide layer which enables the device to operate within a bandwidth of up to 10 GHz. The most important feature of the proposed structure is the back-etched nitride gate design, which can be made within the constraint of current lithography technology limits. A 45 nm gate contact is obtained by process simulation and the device can deliver a drain current density of 0.01 mA/μm with a current gain as high as 1000 for 1.2 V single battery-cell operation. Simulation results on both switching and amplifier applications were obtained
Keywords :
capacitance; circuit simulation; current density; dielectric thin films; electrical contacts; etching; lithography; low-power electronics; microwave amplifiers; microwave field effect transistors; mobile radio; semiconductor device models; static induction transistors; 1.2 V; 10 GHz; 45 nm; RF mobile applications; Si3N4; SiO2; amplifier applications; back-etched nitride gate design; current gain; device operating bandwidth; drain current density; gate bias; gate contact; lateral SIT; lithography technology limit; low-voltage mobile applications; normally off structure; oxide layer; parasitic capacitance; process simulation; simulation; single battery-cell operation; static induction transistor structure; switching applications; ultra-low voltage normally-off lateral SIT; Application software; Etching; Fabrication; Microwave transistors; Mobile computing; P-n junctions; Parasitic capacitance; Radio frequency; Space charge; Voltage;
Conference_Titel :
Industrial Electronics Society, 2000. IECON 2000. 26th Annual Confjerence of the IEEE
Conference_Location :
Nagoya
Print_ISBN :
0-7803-6456-2
DOI :
10.1109/IECON.2000.972258
