Title :
Thermal characterisation and analysis of two tone intermodulation distortion in InGaP/GaAs DHBT
Author :
Khan, A. ; Dharmasiri, C.N. ; Miura, T. ; Rezazadeh, A.A.
Author_Institution :
Sch. of Electr. & Electron. Eng., Manchester Univ., UK
Abstract :
The effect of temperature (-25 to 100 /spl deg/C) on two-tone intermodulation distortion (IMD) characteristics of InGaP/GaAs microwave DHBTs is studied. This is carried out through measurement with the results being compared to a simple analytical technique. The results indicated that varying the temperature has a significant impact on the IMD characteristics. The variations of small signal parameters with temperature, extracted from S-parameter measurements, are then used to carefully analyse the IMD characteristics and identify the physical origin of the change in the non-linearity. In addition, the effects of varying input power on the non-linearities has been studied. This analysis has been reported for the first time and is important in understanding the non-linear characteristics of the microwave device.
Keywords :
III-V semiconductors; S-parameters; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; intermodulation distortion; microwave bipolar transistors; -25 to 100 degC; InGaP-GaAs; S-parameter measurements; microwave DHBT; nonlinear characteristics; two tone intermodulation distortion; Capacitance; Diodes; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Intermodulation distortion; Microwave devices; Signal analysis; Signal generators; Temperature;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
