Title :
Study on high thermal conductivity and thick-thin film hybrid technology of AlN substrate
Author :
Huanbei Chen ; Qiushi Liang
Author_Institution :
No.55 Res. Inst., China Electron. Technol. Group Corp., Nanjing, China
Abstract :
With the trend of miniaturization high power and frequency of electronic devices, the higher performances of cooling, wiring density and lower loss for substrate have been required. Thick Film Circuits and Thin Film Circuits have their limitations on fine wiring and multilayer wiring respectively, which are difficult to simultaneously meet these requirements. In this study, thick-thin film hybrid AlN substrate with properties of high thermal conductivity, multilayer wiring and fine wiring has been researched. The thermal conductivity of AlN substrate has been improved to 190 W/mK by optimizing the preparation and it can content with the cooling requirements effectively. Thick-thin film hybrid technology is induced to meet high density wiring and lower loss. This kind of substrate can be used to High- Power T/R Module, High Speed Optical Transceiver Module and other fields.
Keywords :
III-V semiconductors; aluminium compounds; cooling; multilayers; thermal conductivity; thick film circuits; thin film circuits; wide band gap semiconductors; wiring; AlN; cooling performances; electronic devices; fine wiring; high density wiring; high speed optical transceiver module; high-power T-R Module; multilayer wiring; thermal conductivity; thick film circuits; thick-thin film hybrid AlN substrate; thin film circuits; Adaptive optics; Metallization; Optical devices; Optical films; Optical losses; Substrates; Aluminum nitride; High Thermal Conductivity; High density; High power;
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2015 16th International Conference on
Conference_Location :
Changsha
DOI :
10.1109/ICEPT.2015.7236782