Title :
Ka-band AlGaN/GaN HEMT high power and driver amplifier MMICs
Author :
van Heijningen, M. ; van Vliet, F.E. ; Quay, R. ; van Raay, F. ; Kiefer, R. ; Müller, S. ; Krausse, D. ; Seelmann-Eggebert, M. ; Mikulla, M. ; Schlechtweg, M.
Author_Institution :
TNO Defence, Security & Safety, Netherlands
Abstract :
In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 /spl mu/m thick SiC substrate. The measured small-signal gain of the driver is 14 dB at 28.5 GHz and the measured output power is 28.6 dBm at 28 GHz. The power amplifier shows a measured small-signal gain of 10.7 dB at 25.5 GHz and output power of 34.1 dBm at 27 GHz. Both MMICs have a very good yield and performance for a first iteration design.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; coplanar waveguides; gallium compounds; wide band gap semiconductors; 10.7 dB; 25.5 GHz; 28 GHz; 28.5 GHz; 30 GHz; AlGaN-GaN; CPW technology; HEMT; driver amplifier MMIC; high power amplifier; Aluminum gallium nitride; Driver circuits; Gain measurement; Gallium nitride; HEMTs; High power amplifiers; MMICs; Power amplifiers; Power generation; Power measurement;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
