Digital SiGe-chips for data transmission up to 85 Gbit/s

Author

Wohlgemuth, O. ; Müller, W. ; Paschke, P. ; Link, T. ; Lederer, R. ; Kolb, B. ; Dotzauer, H.

Author_Institution

Lucent Technol., Nuremberg, Germany

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

245

Lastpage

248

Abstract

Design and performance of a 2:1 multiplexer and 1:2 demultiplexer IC up to 85.4 Gbit/s are presented. The chips are fabricated in an advanced SiGe technology with a cutoff frequency f/sub t/ of 200 GHz and a maximum oscillation frequency f/sub max/ of 275 GHz. With these two chips electrical data transmission at 80 and 85.4 Gbit/s could be achieved. In addition a pseudo random bit sequence (PRBS) generator IC is shown operating up to 80 Gbit/s and generating a 2/sup 31/-1 or a 2/sup 7/-1 pattern.

Keywords

Ge-Si alloys; data communication; demultiplexing equipment; integrated circuit design; millimetre wave integrated circuits; multiplexing equipment; random sequences; semiconductor materials; 200 GHz; 275 GHz; 85.4 Gbit/s; SiGe; demultiplexer IC; electrical data transmission; maximum oscillation frequency; multiplexer; pseudorandom bit sequence generator; Bonding; CMOS technology; Cables; Cutoff frequency; Data communication; Digital circuits; Germanium silicon alloys; Integrated circuit technology; Multiplexing; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637196