DocumentCode :
2023636
Title :
Digital SiGe-chips for data transmission up to 85 Gbit/s
Author :
Wohlgemuth, O. ; Müller, W. ; Paschke, P. ; Link, T. ; Lederer, R. ; Kolb, B. ; Dotzauer, H.
Author_Institution :
Lucent Technol., Nuremberg, Germany
fYear :
2005
fDate :
3-4 Oct. 2005
Firstpage :
245
Lastpage :
248
Abstract :
Design and performance of a 2:1 multiplexer and 1:2 demultiplexer IC up to 85.4 Gbit/s are presented. The chips are fabricated in an advanced SiGe technology with a cutoff frequency f/sub t/ of 200 GHz and a maximum oscillation frequency f/sub max/ of 275 GHz. With these two chips electrical data transmission at 80 and 85.4 Gbit/s could be achieved. In addition a pseudo random bit sequence (PRBS) generator IC is shown operating up to 80 Gbit/s and generating a 2/sup 31/-1 or a 2/sup 7/-1 pattern.
Keywords :
Ge-Si alloys; data communication; demultiplexing equipment; integrated circuit design; millimetre wave integrated circuits; multiplexing equipment; random sequences; semiconductor materials; 200 GHz; 275 GHz; 85.4 Gbit/s; SiGe; demultiplexer IC; electrical data transmission; maximum oscillation frequency; multiplexer; pseudorandom bit sequence generator; Bonding; CMOS technology; Cables; Cutoff frequency; Data communication; Digital circuits; Germanium silicon alloys; Integrated circuit technology; Multiplexing; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
Type :
conf
Filename :
1637196
Link To Document :
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