DocumentCode :
2023639
Title :
High frequency (GHz) and low resistance integrated inductors using magnetic materials
Author :
Gardner, Donald S. ; Crawford, Ankur M. ; Wang, Shan
Author_Institution :
Intel Corporation, Components Research, SCl1-03, Santa Clara, California
fYear :
2001
fDate :
6-6 June 2001
Firstpage :
101
Lastpage :
103
Abstract :
Integrated microinductors, using magnetic materials were fabricated with cutoff frequencies over 3 GHz. Magnetic materials are typically not used in high-frequency inductors because their frequency range has been limited to <100 MHz. The high-frequency magnetic film, an amorphous CoZrTa, was integrated into standard silicon process technology. Inductors consume large amounts of chip area, but with magnetic materials, the inductors can be made smaller thereby reducing their capacitance and resistance. A novel 3-dimensional structure for reducing the inductor´s resistance by an order of magnitude was also developed. Simulations of inductors with magnetics and measurements are presented.
Keywords :
Amorphous magnetic materials; Amorphous materials; Capacitance; Cutoff frequency; Electrical resistance measurement; Inductors; Magnetic films; Magnetic materials; Semiconductor device measurement; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
Type :
conf
DOI :
10.1109/IITC.2001.5443594
Filename :
5443594
Link To Document :
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