Title :
A low-noise X-band microstrip VCO with 2.5 GHz tuning range using a GaN-on-SiC p-HEMT
Author :
Maas, A.P.M. ; van Vliet, F.E.
Author_Institution :
TNO Defence, Security & Safety, Netherlands
Abstract :
A low-noise X-band microstrip hybrid VCO has been designed and realised using a 2 /spl times/ 50 /spl mu/m GaN-on-SiC pseudo-morphic HEMT as the active device. The transistor has been manufactured by TIGER and features a gate-length of 0.15 /spl mu/m, an f/sub T/ of 22 GHz, a break-down voltage of 42 Volts and an I/sub dss/ close to 1 A/mm. The VCO has been assembled with standard SMD reflow and chip-on-board technology on Rogers 4003 substrate material. The circuit is biased at +15 Volts and 38 mA and has a measured tuning range from 8.1 to 10.6 GHz, an output power level of +19 dBm and an average phase-noise level of -114 dBc/Hz @ 1 MHz offset.
Keywords :
III-V semiconductors; UHF oscillators; gallium compounds; high electron mobility transistors; microwave oscillators; phase noise; silicon compounds; substrates; tuning; voltage-controlled oscillators; wide band gap semiconductors; 0.15 mum; 2.5 GHz; 22 GHz; 38 mA; 42 V; 50 mum; 8.1 to 10.6 GHz; GaN-SiC; Rogers 4003 substrate material; TIGER; break-down voltage; chip-on-board technology; low-noise X-band microstrip VCO; p-HEMT; pseudo-morphic HEMT; standard SMD reflow; tuning; Assembly; Circuits; Decision support systems; HEMTs; Manufacturing; Microstrip; Phase measurement; Power measurement; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
