Title :
A dual band (10/16 GHz) p-HEMT VCO
Author :
Manan, Vikas ; Long, Stephen I.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We report a 0.15 /spl mu/m p-HEMT dual frequency VCO. The dual frequencies are achieved using a switched-resonator topology. Large devices can be used for switching, as their parasitic capacitance is absorbed into the resonator. The phase noise at 1 MHz offset was -101 dBc and -92 dBc at 10.6 and 16.3 GHz respectively.
Keywords :
high electron mobility transistors; microwave transistors; phase noise; resonators; voltage-controlled oscillators; 10 GHz; 10.6 GHz; 16 GHz; 16.3 GHz; dual band p-HEMT VCO; dual frequencies; parasitic capacitance; phase noise; switched-resonator topology; Capacitors; Dual band; Frequency; Impedance; Inductors; Parasitic capacitance; Phase noise; Switches; Topology; Voltage-controlled oscillators;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
