AlGaN/GaN high electron mobility transistor (HEMT) reliability

The reliability characteristics of AlGaN/GaN HEMTs are reviewed. Basic effects such as the discrepancy between DC predicted and RF measured power are addressed together with effects such as drain current and power degradation observed following RF stress. Technologies based on sapphire, SiC and Si substrates are considered. The impact of process such as passivation, as well as design i.e. barrier layer are considered. DC and microwave properties are considered in the study. Low frequency noise is also discussed in conjunction with degradation following stress.