DocumentCode
2023776
Title
Reliability of RF-MEMS
Author
Gaddi, Roberto ; Gnudi, Antonio ; Tazzoli, Augusto ; Meneghesso, Gaudenzio ; Zanoni, Enrico
Author_Institution
ARCES-DEIS, Bologna Univ., Italy
fYear
2005
fDate
3-4 Oct. 2005
Firstpage
269
Lastpage
272
Abstract
The continuously evolving MEMS technology for RF/microwave applications poses issues regarding new reliability and lifetime estimation. We overview the most important degradation mechanisms concerning capacitive and ohmic RF-MEMS devices and their effects on the device lifetime. Preliminary results are also given on electrostatic discharge effects on ohmic shunt switches adopting a transmission line pulse stress technique.
Keywords
electrostatic discharge; microswitches; microwave switches; reliability; remaining life assessment; capacitive RF-MEMS devices; electrostatic discharge effects; lifetime estimation; microwave applications; ohmic RF-MEMS devices; ohmic shunt switches; transmission line pulse stress technique; Degradation; Electrostatic discharge; Life estimation; Lifetime estimation; Micromechanical devices; Microwave devices; Microwave technology; Radio frequency; Radiofrequency microelectromechanical systems; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location
Paris
Print_ISBN
88-902012-0-7
Type
conf
Filename
1637202
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