DocumentCode :
2023777
Title :
A 64GHz push-push oscillator in 0.13μιη BiCMOS technology
Author :
Ameziane, Chama ; Belot, Didier ; Plana, Robert ; Taris, Thierry ; Deval, Yann ; Begueret, Jean-Baptiste
Author_Institution :
IMS Lab., Univ. of Bordeaux, Talence, France
fYear :
2009
fDate :
Sept. 29 2009-Oct. 1 2009
Firstpage :
401
Lastpage :
404
Abstract :
This paper reports the design and measurements of a 64 GHz push-push oscillator fabricated in 0.13 μm BiCMOS9 mW technology provided by STMicroelectronics. It achieves -14dBm output power at 68 GHz with good fundamental suppression. The VCO has a measured tuning range of 4 GHz from 64 GHz to 68 GHz (fundamentally from 32 GHz to 34 GHz). The oscillator consumes 20 mA, and the buffer has an additional consumption of 23 mA, under 1.8 V voltage supply.
Keywords :
BiCMOS analogue integrated circuits; buffer circuits; field effect MIMIC; millimetre wave oscillators; voltage-controlled oscillators; BiCMOS technology; STMicroelectronics; VCO; buffer circuit; frequency 64 GHz; millimeter wave oscillators; power 9 mW; push-push oscillator; size 0.13 mum; voltage 1.8 V; BiCMOS integrated circuits; Communication system security; Frequency; Microwave technology; Military communication; Power generation; Power system harmonics; Radio spectrum management; Voltage-controlled oscillators; Wireless communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2009. EuMC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4748-0
Type :
conf
Filename :
5296391
Link To Document :
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