ESD characteristics of GaAs versus silicon diode

Author

Park, Changkun ; Yun, Seok-Oh ; Han, Jeonghu ; Cheon, Sang-Hoon ; Park, Jae-Woo ; Hong, Songcheol

Author_Institution

Dept. of EECS, Korea Adv. Inst. of Sci. & Technol., Daejeon

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

273

Lastpage

276

Abstract

The ESD characteristics of GaAs diode are compared with those of silicon diode. The ESD diodes are designed and implemented using GaAs HBT technology and 0.25 mum CMOS technology. The differences of ESD characteristics between GaAs diode and silicon diode are investigated, simulated and measured. Because the thermal characteristics of GaAs are different from those of silicon, the ESD characteristics of GaAs device are different from those of silicon device

Keywords

CMOS integrated circuits; III-V semiconductors; electrostatic discharge; elemental semiconductors; gallium arsenide; semiconductor device models; semiconductor diodes; silicon; thermal conductivity; 0.25 mum CMOS technology; ESD; GaAs; GaAs diode; HBT technology; Si; electrostatic discharge; silicon diode; thermal characteristics; Biological system modeling; CMOS technology; Electrostatic discharge; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Semiconductor diodes; Silicon devices; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637203