Title :
Phonon relaxation times of germanium determined by molecular dynamics at 1000 K
Author :
Goicochea, Javier V ; Michel, Bruno
Author_Institution :
Zurich Res. Lab., IBM Res. GmbH, Ruschlikon, Switzerland
Abstract :
Molecular dynamics simulations (MD) and the normal mode decomposition are used to determine the phonon relaxation times of acoustical and optical modes of germanium (Ge) at 1000 K and 1 atm. The relaxation times are calculated from the temporal decay of the autocorrelation function of the total energy of each normal mode in the [100] direction. Two sets of force field parameters are used to obtain the total energy of each phonon mode. We have found, under the assumption of an isotropic crystal, that the acoustic modes contribute about 90 % to the overall thermal conductivity (being the contribution of longitudinal acoustic modes 60 %), and that the behavior of the relaxation times of acoustic modes can be well represented by power functions with exponents close to 2. Both results are in agreement with previous estimations for silicon (Si) and Ge using MD and ab initio simulations, respectively. Lastly, we have found that only one parameter set is able to reproduce the experimental thermal conductivity at this temperature.
Keywords :
ab initio calculations; elemental semiconductors; germanium; molecular dynamics method; phonons; thermal conductivity; total energy; Ge; ab initio simulation; acoustical modes; autocorrelation function; force field parameters; isotropic crystal; molecular dynamics simulation; normal mode decomposition; optical modes; phonon relaxation times; power functions; pressure 1 atm; temperature 1000 K; temporal decay; thermal conductivity; total energy; Assembly; Electric resistance; Germanium; LED lamps; Light emitting diodes; Phonons; Standardization; Temperature dependence; Thermal management; Thermal resistance; Phonon; germanium; molecular dynamics; relaxation time;
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium, 2010. SEMI-THERM 2010. 26th Annual IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4244-9458-3
Electronic_ISBN :
1065-2221
DOI :
10.1109/STHERM.2010.5444279