RF-MEMS switches based on a low-complexity technology and related aspects of MMIC integration

This paper presents RF-MEMS devices, which are based on low-complexity fabrication technologies. Tuneable filters and phase shifting elements for Ka-band have already been realized by using a fabrication process which requires only two photo-lithographic steps. Adding just one more lithographic process step results in the realization of high performance switching devices with insertion losses of -0.2 dB at 30 GHz. Due to their low fabrication complexity, all these RF-MEMS devices minimize technological challenges and have the potential for being highly reliable due to their design principle. In addition, these technologies may pave the way for the monolithic integration of RF-MEMS based circuits with compound semiconductor MMICs for highly integrated and high performance multi-functional circuits.