DocumentCode :
2023913
Title :
Application of thermoreflectance imaging to identify defects in photovoltaic solar cells
Author :
Kendig, Dustin ; Christofferson, James ; Alers, Glenn B ; Shakouri, Ali
Author_Institution :
Dept. of Electr. Eng., Univ. of California Santa Cruz, Santa Cruz, CA, USA
fYear :
2010
fDate :
21-25 Feb. 2010
Firstpage :
245
Lastpage :
248
Abstract :
Thermoreflectance imaging is used to identify various defects in solar cells with sub-micrometer spatial resolution. Lock-in transient and four-bucket imaging techniques in a megapixel silicon-based CCD are used to obtain the thermoreflectance and electroluminescence signals simultaneously. Linear and non-linear shunts are discovered in thin-film a-Si, poly-Si, and CdTe solar cells. Electroluminescent defects are found in poly-Si solar cells at reverse biases of 5V. Thermal images of micrometer-size defects are taken through 3mm of glass encapsulation.
Keywords :
II-VI semiconductors; amorphous semiconductors; cadmium compounds; electroluminescence; image resolution; infrared imaging; semiconductor thin films; silicon; solar cells; thermoreflectance; CdTe; CdTe solar cell; Si; defect identification; electroluminescence; electroluminescent defects; four-bucket imaging; glass encapsulation; linear shunt; lock-in transient technique; megapixel silicon-based CCD; micrometer-size defects; nonlinear shunt; photovoltaic solar cells; poly-Si solar cell; size 3 mm; sub-micrometer spatial resolution; thermal images; thermoreflectance imaging; thin-film a-Si solar cell; voltage 5 V; Charge coupled devices; Electroluminescence; Encapsulation; Glass; Photovoltaic cells; Photovoltaic systems; Solar power generation; Spatial resolution; Thermoreflectance imaging; Transistors; defects; electroluminescence; shunts; solar cell; thermography; thermoreflectance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium, 2010. SEMI-THERM 2010. 26th Annual IEEE
Conference_Location :
Santa Clara, CA
ISSN :
1065-2221
Print_ISBN :
978-1-4244-9458-3
Electronic_ISBN :
1065-2221
Type :
conf
DOI :
10.1109/STHERM.2010.5444282
Filename :
5444282
Link To Document :
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