DocumentCode
2023999
Title
A simple non-quasi-static non-linear model of electron devices
Author
Santarelli, A. ; Di Giacomo, V. ; Raffo, A. ; Traverso, P.A. ; Vannini, G. ; Filicori, F. ; Monaco, V.A.
Author_Institution
Dept. of Electron., Bologna Univ., Italy
fYear
2005
fDate
3-4 Oct. 2005
Firstpage
305
Lastpage
308
Abstract
A technology-independent, non-quasi-static non-linear model of electron devices capable of accurate predictions at microwave and millimetre waves is proposed in this paper. The model is based on the definition of a quasi-static associated device, which is controlled by means of equivalent voltages. In particular, in the paper it is shown how to define and experimentally identify suitable voltage-controlled voltage sources, which modify the original domain of applied voltages and create a suitable control environment for the purely-quasi-static associated device. The advantage of this approach is that conventional purely quasi-static models can still be adopted even at very high frequencies, if suitable equivalent voltages are applied. Preliminary experimental validation of the approach is provided in the paper by means of a GaAs PHEMT.
Keywords
III-V semiconductors; gallium arsenide; microwave devices; millimetre wave devices; nonlinear network synthesis; GaAs; PHEMT; electron devices; microwave waves; millimetre waves; nonquasi-static nonlinear model; voltage-controlled voltage sources; Circuits; Electron devices; Electronic mail; Frequency; Microwave devices; Microwave technology; Millimeter wave technology; Nonlinear equations; Predictive models; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location
Paris
Print_ISBN
88-902012-0-7
Type
conf
Filename
1637211
Link To Document