Title :
Advanced meander gate p-HEMT model for accurate harmonic modeling of switch MMIC designs
Author :
Holm, M.A. ; Brookbanks, D.M.
Author_Institution :
Filtronic Compound Semicond. Ltd., Durham, UK
Abstract :
This paper presents a non-linear model of a meander gate p-HEMT for switch design. The model combines a modified Parker-Skellern IV form with a custom charge model to accurately predict large signal performance of meander-gate based switches. Comparison between modeled and measured results of a 0.5 mm gate length SPDT switch shows a accurate prediction of the 2/sup nd/ and 3/sup rd/ harmonic generation at the output.
Keywords :
HEMT integrated circuits; MMIC; harmonic generation; integrated circuit design; microwave switches; Parker-Skellern IV form; advanced meander gate p-HEMT model; harmonic generation; harmonic modeling; meander-gate based switches; switch MMIC designs; Communication switching; Equations; Frequency conversion; Impedance; Insertion loss; Knee; MMICs; Predictive models; Switches; Telecommunication switching;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7