DocumentCode
2024121
Title
High frequency class E design methodologies
Author
Colantonio, P. ; Giannini, F. ; Giofrè, R. ; Medina, M. A Yarleque ; Schreurs, D. ; Nauwelaers, B.
Author_Institution
Dept. of Electron. Eng., Rome Univ., Italy
fYear
2005
fDate
3-4 Oct. 2005
Firstpage
329
Lastpage
332
Abstract
Design criteria of class E amplifiers are reviewed and extended for high frequency application. In particular, starting from classical class-E formulas an additional tuning on fundamental output load becomes mandatory to take into account practical limitations arising in high frequency applications. Two examples of class E amplifier designs for X-band application (GaAs based) and C-band (GaN based) are presented.
Keywords
HF amplifiers; III-V semiconductors; gallium arsenide; microwave amplifiers; wide band gap semiconductors; GaAs; GaN; X-band application; class E design methodologies; high frequency applications; Capacitors; Design methodology; Gallium arsenide; Gallium nitride; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Switches; Tuning; Zero voltage switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location
Paris
Print_ISBN
88-902012-0-7
Type
conf
Filename
1637217
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