Title :
Fully monolithic SiGe voltage-controlled-oscillators for wireless phone application
Author :
de Foucauld, E. ; Paillot, J.M. ; Duvanaud, C. ; Mokrani, H. ; Nallatamby, J.C. ; Prigent, M. ; Worner, K.
Author_Institution :
Poitiers Univ., France
Abstract :
Based on a Clapp structure with tuneable capacitor, two fully monolithic voltage-controlled-oscillators (VCO) have been designed using a 30 GHz Ft SiGe technology. The active element of the VCOs is a common emitter SiGe heterojunction bipolar transistor. The first VCO, which is able to provide a high output power, runs in the 1490-1520 MHz range. Its control voltage sensitivity is 14 MHz/V and its output power value is 9.5 dBm (in 50 /spl Omega/ load) for a 31 mA current consumption. The second one is a double band VCO: the proposed structure has been employed in conjunction with an integrated switch. The simulated results are given in the 867-901 and 927-957 MHz ranges.
Keywords :
Ge-Si alloys; MMIC oscillators; UHF bipolar transistors; UHF integrated circuits; UHF oscillators; bipolar analogue integrated circuits; heterojunction bipolar transistors; mobile radio; semiconductor materials; voltage-controlled oscillators; 1490 to 1520 MHz; 30 GHz; 31 mA; 897 to 901 MHz; 927 to 957 MHz; Clapp structure; SiGe; active element; common emitter heterojunction bipolar transistor; control voltage sensitivity; current consumption; double band VCO; integrated switch; output power; output power value; tuneable capacitor; voltage-controlled-oscillators; wireless phone application; Capacitors; Circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Phase noise; Silicon germanium; Switches; Voltage control; Voltage-controlled oscillators;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2000. Digest of Papers. 2000 Topical Meeting on
Conference_Location :
Garmisch, Germany
Print_ISBN :
0-7803-6255-1
DOI :
10.1109/SMIC.2000.844291
