DocumentCode :
2024239
Title :
A flip-chip single-pole three-throw switch with integrated bypass LNA for WLAN applications
Author :
Fox, Timothy ; Giacchino, Richard
Author_Institution :
MA-COM Technol. Solutions, Lowell, MA, USA
fYear :
2009
fDate :
28-29 Sept. 2009
Firstpage :
531
Lastpage :
534
Abstract :
A SP3T switch with an integrated bypass LNA has been designed as a flip-chip die using a GaAs E/D PHEMT process. The part consists of a standard three-throw switch with TX, RX and Bluetooth ports and includes a single-stage LNA featuring a low-gain/shut-off bypass path integrated on the die. The LNA bypass/shut-off functionality is achieved utilizing an enhancement-mode PHEMT to control biasing. GaAs wafer bumping is a technology that various M/A-COM technology solutions (MTS) customers are mandating in order to participate on next generation products. The main advantages of flip-chip technology over a conventional wire bonded plastic package are smaller footprint, reduced weight and improved electrical performance.
Keywords :
flip-chip devices; integrated circuit design; wireless LAN; E/D PHEMT process; GaAs; M/A-COM technology solutions; WLAN; flip-chip single-pole three-throw switch; wireless LAN; Bluetooth; Gallium arsenide; Integrated circuit technology; PHEMTs; Packaging; Switches; Switching circuits; Thermal conductivity; Wire; Wireless LAN;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4749-7
Type :
conf
Filename :
5296412
Link To Document :
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