• DocumentCode
    2024239
  • Title

    A flip-chip single-pole three-throw switch with integrated bypass LNA for WLAN applications

  • Author

    Fox, Timothy ; Giacchino, Richard

  • Author_Institution
    MA-COM Technol. Solutions, Lowell, MA, USA
  • fYear
    2009
  • fDate
    28-29 Sept. 2009
  • Firstpage
    531
  • Lastpage
    534
  • Abstract
    A SP3T switch with an integrated bypass LNA has been designed as a flip-chip die using a GaAs E/D PHEMT process. The part consists of a standard three-throw switch with TX, RX and Bluetooth ports and includes a single-stage LNA featuring a low-gain/shut-off bypass path integrated on the die. The LNA bypass/shut-off functionality is achieved utilizing an enhancement-mode PHEMT to control biasing. GaAs wafer bumping is a technology that various M/A-COM technology solutions (MTS) customers are mandating in order to participate on next generation products. The main advantages of flip-chip technology over a conventional wire bonded plastic package are smaller footprint, reduced weight and improved electrical performance.
  • Keywords
    flip-chip devices; integrated circuit design; wireless LAN; E/D PHEMT process; GaAs; M/A-COM technology solutions; WLAN; flip-chip single-pole three-throw switch; wireless LAN; Bluetooth; Gallium arsenide; Integrated circuit technology; PHEMTs; Packaging; Switches; Switching circuits; Thermal conductivity; Wire; Wireless LAN;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-4749-7
  • Type

    conf

  • Filename
    5296412