Title :
Determination of channel temperature of AlGaN/GaN HEMT by electrical method
Author :
Shiwei Feng ; Peifeng Hu ; Guangchen Zhang ; Chunsheng Guo ; Xuesong Xie ; Tangsheng Chen
Author_Institution :
Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
Abstract :
In this paper, the linear relationship of forward Schottky junction voltage of AlGaN/GaN HEMT with temperature was investigated. It was used as temperature sensitive parameter to determine the channel temperature at its normal working state by fast switch circuit technique. The regress of tested data was used to reduce the scatter error too. The thermal resistance constitution was extracted from the transient heating response curves.
Keywords :
III-V semiconductors; Schottky barriers; Wiener filters; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; semiconductor device reliability; temperature measurement; thermal analysis; thermal resistance; wide band gap semiconductors; AlGaN-GaN; HEMT; channel temperature; electrical method; fast switch circuit technique; forward Schottky junction voltage; scatter error; temperature sensitive parameter; thermal resistance; transient heating; Aluminum gallium nitride; Circuit testing; Gallium nitride; HEMTs; Scattering; Switches; Switching circuits; Temperature sensors; Thermal resistance; Voltage; HEMT; channel temperature; electrical method; reliability;
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium, 2010. SEMI-THERM 2010. 26th Annual IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4244-9458-3
Electronic_ISBN :
1065-2221
DOI :
10.1109/STHERM.2010.5444296
