Title :
Multithrow heterojunction PIN diode switches
Author :
Brogle, James J. ; Curcio, Daniel G. ; Hoag, David R. ; Boles, Timothy E.
Author_Institution :
MA-COM Technol. Solutions, Lowell, MA, USA
Abstract :
The novel use of an AlGaAs/GaAs heterojunction to form a PIN diode, with reduced RF resistance (RS) and no change in junction capacitance (CT), has been analyzed and employed in the development of several different PIN diode switches of various circuit topologies. Series designs demonstrate improved insertion loss, shunt designs improved isolation, and series-shunt designs improvements in both parameters. These switches demonstrate superior broadband performance, with low insertion loss and high isolation from 50 MHz to almost 80 GHz, and series-shunt switches exhibit 50% increased input power capability over equivalent homojunction GaAs PIN diode switches.
Keywords :
III-V semiconductors; aluminium compounds; capacitance measurement; gallium arsenide; isolation technology; microwave switches; network topology; p-i-n diodes; semiconductor heterojunctions; AlGaAs-GaAs; PIN diode switches; RF resistance; circuit topology; frequency 50 MHz; isolation; junction capacitance; multithrow heterojunction; series-shunt designs; superior broadband performance; Anodes; Capacitance; Gallium arsenide; Heterojunctions; Insertion loss; Photonic band gap; Radio frequency; Semiconductor diodes; Switches; Topology;
Conference_Titel :
Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4749-7
