Title :
Compact W-band SPQT MMIC switch using traveling wave concept
Author :
Chao, Shih-Fong ; Tsai, Zuo-Min ; Lin, Kun-You ; Wang, Huei
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A high performance W-band single-pole-quadruple-throw (SPQT) switch with a compact chip size using GaAs HEMT is demonstrated. This SPQT switch has a measured insertion loss of 3.9-5.5 dB and isolation higher than 30 dB from 70 to 102 GHz. A minimum insertion loss of 3.9 dB with isolation higher than 30 dB was measured at 90 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; MIMIC; MMIC; gallium arsenide; microwave switches; 3.9 to 5.5 dB; 70 to 102 GHz; GaAs; HEMT; W-band SPQT MMIC switch; single-pole-quadruple-throw switch; traveling wave concept; Communication switching; Gallium arsenide; HEMTs; Inductance; Insertion loss; Loss measurement; MMICs; Radio frequency; Switches; Switching circuits;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
