• DocumentCode
    2024300
  • Title

    Issues in junction-to-case thermal characterization of power packages with large surface area

  • Author

    Vass-Varnai, Andras ; Shan Gao ; Sarkany, Zoltan ; Jongman Kim ; Seogmoon Choi ; Farkas, Gabor ; Poppe, Andreas ; Rencz, Marta

  • Author_Institution
    MicReD Div., Mentor Graphics Hungary Ltd., Hungary
  • fYear
    2010
  • fDate
    21-25 Feb. 2010
  • Firstpage
    158
  • Lastpage
    164
  • Abstract
    There are several ways to define the junction-to-case thermal resistance; however, it is rather challenging to characterize the heat-flow in a package by a single number in an accurate and reproducible way. For many power package families such as TO-type packages the thermal transient testing and the so-called dual interface method can give reliable results. The diverging point of structure functions from dual thermal transients gives a good picture of the material interfaces in such structures. However, the location and nature of the diverging point strongly depends on the shape and direction of the heat-spreading. If the package area is much larger than the dissipating chip the shape of the heat-flow changes when using different interfaces. This causes structure functions corresponding to the two setups deviate much before reaching the case surface. In this paper the origin of this phenomenon is investigated. Measurement and simulation results are compared on different large IGBT modules with several modifications in their structure enabling a detailed analysis of the heat-flow path. A comparison is given between heating only a small fraction of a large module and heating all chips. Some samples went through thermal cycling reliability tests which resulted in cracks below the chips. The effect of the reduced die-attach area is visualized with the help of structure functions.
  • Keywords
    cracks; insulated gate bipolar transistors; integrated circuit reliability; microassembling; thermal management (packaging); thermal resistance; cracks; die-attach area; dual interface; heat flow path; junction-to-case thermal resistance; large IGBT modules; large surface area; material interfaces; power packages; thermal cycling reliability tests; thermal transient testing; Analytical models; Insulated gate bipolar transistors; Packaging; Resistance heating; Semiconductor device measurement; Shape; Surface resistance; Testing; Thermal resistance; Visualization; Junction-to-case thermal resistance; dual interface methodology; large substrate area power modules; thermal transient testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Thermal Measurement and Management Symposium, 2010. SEMI-THERM 2010. 26th Annual IEEE
  • Conference_Location
    Santa Clara, CA
  • ISSN
    1065-2221
  • Print_ISBN
    978-1-4244-9458-3
  • Electronic_ISBN
    1065-2221
  • Type

    conf

  • DOI
    10.1109/STHERM.2010.5444299
  • Filename
    5444299