Title :
The effects of geometrical scaling on the RF performance of SiGe HBTs
Author :
Shiming Zhang ; Guofu Niu ; Cressler, John D. ; Joseph, A.J. ; Freeman, G. ; Harame, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA
Abstract :
We examine the geometrical scaling issues in SiGe HBT technology. Width scaling, length scaling, and stripe number scaling are quantified from an RF design perspective at 2 GHz. We conclude that a SiGe HBT with emitter area A/sub E/=0.5/spl times/20/spl times/6 /spl mu/m/sup 2/ is optimum for low noise applications at J/sub c/=0.1 mA//spl mu/m/sup 3/ and f=2 GHz.
Keywords :
Ge-Si alloys; UHF bipolar transistors; heterojunction bipolar transistors; semiconductor device noise; semiconductor materials; 2 GHz; RF performance; SiGe; SiGe HBTs; geometrical scaling; length scaling; low noise applications; stripe number scaling; width scaling; Cutoff frequency; Electrical resistance measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Noise figure; Noise measurement; Radio frequency; Scattering parameters; Silicon germanium;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2000. Digest of Papers. 2000 Topical Meeting on
Conference_Location :
Garmisch, Germany
Print_ISBN :
0-7803-6255-1
DOI :
10.1109/SMIC.2000.844295
