• DocumentCode
    2024316
  • Title

    The effects of geometrical scaling on the RF performance of SiGe HBTs

  • Author

    Shiming Zhang ; Guofu Niu ; Cressler, John D. ; Joseph, A.J. ; Freeman, G. ; Harame, D.L.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA
  • fYear
    2000
  • fDate
    28-28 April 2000
  • Firstpage
    48
  • Lastpage
    51
  • Abstract
    We examine the geometrical scaling issues in SiGe HBT technology. Width scaling, length scaling, and stripe number scaling are quantified from an RF design perspective at 2 GHz. We conclude that a SiGe HBT with emitter area A/sub E/=0.5/spl times/20/spl times/6 /spl mu/m/sup 2/ is optimum for low noise applications at J/sub c/=0.1 mA//spl mu/m/sup 3/ and f=2 GHz.
  • Keywords
    Ge-Si alloys; UHF bipolar transistors; heterojunction bipolar transistors; semiconductor device noise; semiconductor materials; 2 GHz; RF performance; SiGe; SiGe HBTs; geometrical scaling; length scaling; low noise applications; stripe number scaling; width scaling; Cutoff frequency; Electrical resistance measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Noise figure; Noise measurement; Radio frequency; Scattering parameters; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems, 2000. Digest of Papers. 2000 Topical Meeting on
  • Conference_Location
    Garmisch, Germany
  • Print_ISBN
    0-7803-6255-1
  • Type

    conf

  • DOI
    10.1109/SMIC.2000.844295
  • Filename
    844295
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2024316