A Ku band SiGe low noise amplifier

Author

Schad, K.-B. ; Urben, U. ; Soenmez, E. ; Abele, P. ; Schumacher, H.

Author_Institution

Dept. of Electron. Devices & Circuits, Ulm Univ., Germany

fYear

2000

fDate

28-28 April 2000

Firstpage

52

Lastpage

54

Abstract

SiGe heterojunction bipolar transistors (HBTs) combine good overall RF performance with low noise figures. The use of SiGe HBT MMICs in RF communication systems promises low cost and high yield. Potential markets today are 10-12 GHz TV broadcasting and multimedia-delivery satellite systems. They can be addressed by present device technologies. Future systems will operate in the higher Ku and Ka bands and will require an optimization of the SiGe HBT device structures. The SiGe HBT low noise amplifier presented here is a design study that demonstrates the ability to reach beyond X-band. It shows that scaled SiGe transistors will continue to be a low cost option for the future communication market,.

Keywords

Ge-Si alloys; MMIC amplifiers; bipolar MMIC; heterojunction bipolar transistors; integrated circuit design; integrated circuit noise; semiconductor materials; Ku band LNA; RF communication systems; RF performance; SiGe; SiGe HBT MMICs; heterojunction bipolar transistors; low noise amplifier; low noise figure; scaled SiGe transistors; Costs; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; MMICs; Noise figure; Radio frequency; Radiofrequency amplifiers; Silicon germanium; TV broadcasting;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2000. Digest of Papers. 2000 Topical Meeting on

Conference_Location

Garmisch, Germany

Print_ISBN

0-7803-6255-1

Type

conf

DOI

10.1109/SMIC.2000.844296

Filename

844296