Title :
GaN H-FET development at QinetiQ
Author :
Martin, T. ; Uren, M.J. ; Balmer, R.S. ; Soley, D. ; Wallis, D.J. ; Hilton, K.P. ; Maclean, J.O. ; Munday, A.G. ; Hydes, A.J. ; Hayes, D.G. ; Oxley, C.H. ; McGovern, P. ; Tasker, P.J.
Author_Institution :
QinetiQ Ltd, Malvern, UK
Abstract :
The AlGaN/GaN HFET project at QinetiQ has the capability to grow high quality layers using MOVPE, fabricate HFETs with 0.8 and 0.25 /spl mu/m gate length and fabricate amplifiers. Here we present recent work on topics as diverse as X-ray determination of aluminium concentration, 0.25 Ohm.mm Ohmic contacts, measurement of saturated velocity, current slump and a 57 W hybrid amplifier.
Keywords :
III-V semiconductors; aluminium compounds; amplifiers; gallium compounds; high electron mobility transistors; ohmic contacts; vapour phase epitaxial growth; wide band gap semiconductors; 0.25 mum; 0.8 mum; AlGaN-GaN; H-FET development; MOVPE; Ohmic contacts; X-ray determination; aluminium concentration; amplifiers; current slump; high quality layers; saturated velocity; Aluminum gallium nitride; Current measurement; Current slump; Epitaxial growth; Epitaxial layers; Gallium nitride; HEMTs; MODFETs; Ohmic contacts; Velocity measurement;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
