Title :
5 to 25 GHz SiGe MMIC oscillators on a commercial process
Author :
Kuhnert, H. ; Heinrich, Wolfgang
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
Abstract :
State-of-the-art monolithic oscillators and VCOs using the commercially available TEMIC SiGe1-process are presented. Results comprise a 4.75 GHz buffered VCO with up to 18 dBm output power and 1 GHz tuning bandwidth, a 17 GHz oscillator with 8 dBm output power and a 25 GHz oscillator delivering 4.2 dBm. For the 25 GHz MMIC-oscillator, a single sideband phase noise of -93 dBc/Hz at 100 kHz frequency offset is achieved. All designs are completely monolithic, i.e., varactor diodes and bias networks are included on chip.
Keywords :
Ge-Si alloys; MMIC oscillators; bipolar MMIC; circuit tuning; heterojunction bipolar transistors; integrated circuit design; semiconductor materials; voltage-controlled oscillators; 1 GHz; 4.75 to 25 GHz; SiGe; SiGe MMIC oscillators; TEMIC SiGe1-process; VCOs; commercial process; monolithic oscillators; onchip bias networks; onchip varactor diodes; single sideband phase noise; Bandwidth; Frequency; Germanium silicon alloys; MMICs; Phase noise; Power generation; Silicon germanium; Tuning; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2000. Digest of Papers. 2000 Topical Meeting on
Conference_Location :
Garmisch, Germany
Print_ISBN :
0-7803-6255-1
DOI :
10.1109/SMIC.2000.844298
