5 to 25 GHz SiGe MMIC oscillators on a commercial process

Author

Kuhnert, H. ; Heinrich, Wolfgang

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany

fYear

2000

fDate

28-28 April 2000

Firstpage

60

Lastpage

63

Abstract

State-of-the-art monolithic oscillators and VCOs using the commercially available TEMIC SiGe1-process are presented. Results comprise a 4.75 GHz buffered VCO with up to 18 dBm output power and 1 GHz tuning bandwidth, a 17 GHz oscillator with 8 dBm output power and a 25 GHz oscillator delivering 4.2 dBm. For the 25 GHz MMIC-oscillator, a single sideband phase noise of -93 dBc/Hz at 100 kHz frequency offset is achieved. All designs are completely monolithic, i.e., varactor diodes and bias networks are included on chip.

Keywords

Ge-Si alloys; MMIC oscillators; bipolar MMIC; circuit tuning; heterojunction bipolar transistors; integrated circuit design; semiconductor materials; voltage-controlled oscillators; 1 GHz; 4.75 to 25 GHz; SiGe; SiGe MMIC oscillators; TEMIC SiGe1-process; VCOs; commercial process; monolithic oscillators; onchip bias networks; onchip varactor diodes; single sideband phase noise; Bandwidth; Frequency; Germanium silicon alloys; MMICs; Phase noise; Power generation; Silicon germanium; Tuning; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2000. Digest of Papers. 2000 Topical Meeting on

Conference_Location

Garmisch, Germany

Print_ISBN

0-7803-6255-1

Type

conf

DOI

10.1109/SMIC.2000.844298

Filename

844298