Title :
Design of X-Band GaN MMICs using field plates
Author :
Kühn, J. ; van Raay, F. ; Quay, R. ; Kiefer, R. ; Peschel, D. ; Mikulla, M. ; Seelmann-Eggebert, M. ; Bronner, W. ; Schlechtweg, M. ; Ambacher, O. ; Thumm, M.
Author_Institution :
Fraunhofer Inst. for Appl. Solid-State Phys., Freiburg, Germany
Abstract :
Two field plate variants of AlGaN/GaN-HEMTs with and without source-connected field plate (ldquoshieldrdquo) were analyzed for the design of efficient High-Power-Amplifier MMICs operating at X-Band frequencies. This paper presents the design and realization of three dual-stage microstrip MMICs using different device variants for narrowband and broadband applications. Two narrowband HPAs, using GaN HEMTs with and without shield, achieve a maximum output power and PAE of 20 W and >39 %, respectively. A broadband amplifier containing GaN HEMTs without shield reaches a simulated output power beyond 12 W with >30 % PAE over 9-11 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; field effect MMIC; gallium compounds; microstrip circuits; wide band gap semiconductors; wideband amplifiers; AlGaN-GaN; AlGaN/GaN-HEMT; X-band GaN MMIC; broadband amplifier; dual-stage microstrip MMIC; frequency 9 GHz to 11 GHz; high-power-amplifier MMIC; narrowband amplifier; source-connected field plate; Aluminum gallium nitride; Frequency; Gallium nitride; HEMTs; MMICs; MODFETs; Microstrip; Narrowband; Power amplifiers; Power generation;
Conference_Titel :
Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4749-7
