High power/high bandwidth GaN MMICs and hybrid amplifiers: design and characterization

Author

van Raay, F. ; Quay, R. ; Kiefer, R. ; Walcher, H. ; Kappeler, O. ; Seelmann-Eggebert, M. ; Müller, S. ; Schlechtweg, M. ; Weimann, G.

Author_Institution

Fraunhofer Inst. of Appl. Solid-State Phys., Freiberg, Germany

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

373

Lastpage

376

Abstract

Broadband microstrip and coplanar MMIC amplifiers featuring beyond 10 W for X-band radar applications are realized in a AlGaN/GaN HEMT technology on 2" s.i. SiC substrate. Single-stage and dual-stage demonstrators with flat gain from 1 GHz to 2.7 GHz and up to 40 W peak power in hybrid microstrip technology for basestation applications are presented. The performance illustrates the potential of this technology with very high bandwidth and superior power density in comparison to GaAs.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium compounds; microstrip circuits; radar; substrates; wide band gap semiconductors; wideband amplifiers; 1 to 2.7 GHz; AlGaN-GaN; HEMT technology; SiC; X-band radar applications; basestation applications; broadband microstrip MMIC amplifiers; coplanar MMIC amplifiers; demonstrators; hybrid microstrip technology; substrate; Aluminum gallium nitride; Bandwidth; Broadband amplifiers; Gallium nitride; HEMTs; High power amplifiers; MMICs; Microstrip; Radar applications; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637233