Title :
High power/high bandwidth GaN MMICs and hybrid amplifiers: design and characterization
Author :
van Raay, F. ; Quay, R. ; Kiefer, R. ; Walcher, H. ; Kappeler, O. ; Seelmann-Eggebert, M. ; Müller, S. ; Schlechtweg, M. ; Weimann, G.
Author_Institution :
Fraunhofer Inst. of Appl. Solid-State Phys., Freiberg, Germany
Abstract :
Broadband microstrip and coplanar MMIC amplifiers featuring beyond 10 W for X-band radar applications are realized in a AlGaN/GaN HEMT technology on 2" s.i. SiC substrate. Single-stage and dual-stage demonstrators with flat gain from 1 GHz to 2.7 GHz and up to 40 W peak power in hybrid microstrip technology for basestation applications are presented. The performance illustrates the potential of this technology with very high bandwidth and superior power density in comparison to GaAs.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium compounds; microstrip circuits; radar; substrates; wide band gap semiconductors; wideband amplifiers; 1 to 2.7 GHz; AlGaN-GaN; HEMT technology; SiC; X-band radar applications; basestation applications; broadband microstrip MMIC amplifiers; coplanar MMIC amplifiers; demonstrators; hybrid microstrip technology; substrate; Aluminum gallium nitride; Bandwidth; Broadband amplifiers; Gallium nitride; HEMTs; High power amplifiers; MMICs; Microstrip; Radar applications; Silicon carbide;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
