Title :
Wide band high linearity and high isolation mixer MMIC developed on GaAs 0.25µm Power pHEMT technology
Author :
Dinari, M. ; Serru, V. ; Camiade, M. ; Teyssandier, C. ; Baglieri, D. ; Durand, E. ; Mallet-Guy, B. ; Plaze, J.P.
Author_Institution :
United Monolithic Semicond. SAS, Orsay, France
Abstract :
In the frame of radar and warfare applications, a Monolithic Microwave Integrated Circuit (MMIC) Mixer has been developed using a UMS GaAs 0.25 mum Power pHEMT Technology. The mixer presented in this document exhibits at the same time wide frequency band, high isolation and high linearity. In the 6-18 GHz frequency band, the mixer demonstrates 25 dB for the isolations, an input RF compression point higher than 16 dBm and an Input IP3 of 25 dBm. To our knowledge these performances are among the highest reported on a fully integrated GaAs MMIC.
Keywords :
III-V semiconductors; MMIC mixers; gallium arsenide; power HEMT; GaAs; frequency 6 GHz to 18 GHz; fully integrated MMIC; high isolation mixer MMIC; input RF compression point; monolithic microwave integrated circuit mixer; power pHEMT technology; size 0.25 mum; wide band high linearity mixer; Application specific integrated circuits; Frequency; Gallium arsenide; Integrated circuit technology; Isolation technology; Linearity; MMICs; PHEMTs; Radar applications; Wideband;
Conference_Titel :
Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4749-7
