Characterization of a bulk-micromachined post-process module: for silicon RF technology

In spite of the many advantages of state-of-the-art silicon technology, the lack of a RF ground plane at sufficient distance beneath the surface and the frontside contact to it are likely to present considerable shortcomings for future radiofrequency (RF) applications. Further, the RF crosstalk through the conductive silicon substrate cannot easily be minimized. By the local removal of the substrate-silicon, the crosstalk and loss can largely be reduced. In order to overcome these shortcomings, a novel post-processing technology, applicable to any industrial integration process, is proposed and characterized in this paper.