DocumentCode :
2024682
Title :
Diamond MESFET technology development for microwave integrated circuits
Author :
Calvani, P. ; Corsaro, A. ; Sinisi, F. ; Rossi, M.C. ; Conte, G. ; Giovine, E. ; Ciccognani, W. ; Limiti, E.
Author_Institution :
Electron. Eng. Dept., Univ. of Roma Tre, Rome, Italy
fYear :
2009
fDate :
28-29 Sept. 2009
Firstpage :
148
Lastpage :
151
Abstract :
Submicron gate-length metal-semiconductor field effect transistors (MESFETs) were fabricated on hydrogen-terminated-large grain polycrystalline diamond. Devices showed high drain-source current (140 mA/mm) and large transconductance values (50 ms/mm), with a cut off frequency ft=10 GHz and a maximum oscillation frequency, fmax, up to 35 GHz. These values suggest device microwave operation in the k-band.
Keywords :
MESFET integrated circuits; diamond; field effect MMIC; C; MESFET technology; drain-source current; gate-length metal-semiconductor field effect transistor; hydrogen-terminated-large grain polycrystalline diamond; k-band device; microwave integrated circuits; transconductance; FETs; Gallium nitride; Integrated circuit technology; Lithography; MESFET integrated circuits; Microwave devices; Microwave integrated circuits; Microwave technology; Radio frequency; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4749-7
Type :
conf
Filename :
5296429
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2024682
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