• DocumentCode
    2024682
  • Title

    Diamond MESFET technology development for microwave integrated circuits

  • Author

    Calvani, P. ; Corsaro, A. ; Sinisi, F. ; Rossi, M.C. ; Conte, G. ; Giovine, E. ; Ciccognani, W. ; Limiti, E.

  • Author_Institution
    Electron. Eng. Dept., Univ. of Roma Tre, Rome, Italy
  • fYear
    2009
  • fDate
    28-29 Sept. 2009
  • Firstpage
    148
  • Lastpage
    151
  • Abstract
    Submicron gate-length metal-semiconductor field effect transistors (MESFETs) were fabricated on hydrogen-terminated-large grain polycrystalline diamond. Devices showed high drain-source current (140 mA/mm) and large transconductance values (50 ms/mm), with a cut off frequency ft=10 GHz and a maximum oscillation frequency, fmax, up to 35 GHz. These values suggest device microwave operation in the k-band.
  • Keywords
    MESFET integrated circuits; diamond; field effect MMIC; C; MESFET technology; drain-source current; gate-length metal-semiconductor field effect transistor; hydrogen-terminated-large grain polycrystalline diamond; k-band device; microwave integrated circuits; transconductance; FETs; Gallium nitride; Integrated circuit technology; Lithography; MESFET integrated circuits; Microwave devices; Microwave integrated circuits; Microwave technology; Radio frequency; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-4749-7
  • Type

    conf

  • Filename
    5296429
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2024682