DocumentCode
2024688
Title
Integrated optoelectronic devices using compound semiconductor nanowires
Author
Wang, Deli
Author_Institution
Dept.of Electr. & Comput. Eng., California Univ., La Jolla, CA, USA
Volume
2
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
943
Abstract
Compound semiconductor nanowires as attractive and versatile building blocks for the "bottom-up" assembly of photonic devices, including photodetectors, light-emitting diodes (LEDs) , and lasers are briefly discussed in the paper . The ability to assemble and electrically interconnect these building blocks is especially critical since it represents a unique approach to active multi-color device components on a single chip unlike the conventional technologies.
Keywords
integrated optoelectronics; light emitting diodes; micro-optics; nanowires; photodetectors; semiconductor lasers; semiconductor quantum wires; compound semiconductor nanowires; integrated optoelectronic devices; lasers; light-emitting diodes; photodetectors; Assembly; Cascading style sheets; Gallium nitride; III-V semiconductor materials; Integrated optoelectronics; Light emitting diodes; Nanowires; Optical materials; Substrates; Superlattices;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363556
Filename
1363556
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