• DocumentCode
    2024688
  • Title

    Integrated optoelectronic devices using compound semiconductor nanowires

  • Author

    Wang, Deli

  • Author_Institution
    Dept.of Electr. & Comput. Eng., California Univ., La Jolla, CA, USA
  • Volume
    2
  • fYear
    2004
  • fDate
    7-11 Nov. 2004
  • Firstpage
    943
  • Abstract
    Compound semiconductor nanowires as attractive and versatile building blocks for the "bottom-up" assembly of photonic devices, including photodetectors, light-emitting diodes (LEDs) , and lasers are briefly discussed in the paper . The ability to assemble and electrically interconnect these building blocks is especially critical since it represents a unique approach to active multi-color device components on a single chip unlike the conventional technologies.
  • Keywords
    integrated optoelectronics; light emitting diodes; micro-optics; nanowires; photodetectors; semiconductor lasers; semiconductor quantum wires; compound semiconductor nanowires; integrated optoelectronic devices; lasers; light-emitting diodes; photodetectors; Assembly; Cascading style sheets; Gallium nitride; III-V semiconductor materials; Integrated optoelectronics; Light emitting diodes; Nanowires; Optical materials; Substrates; Superlattices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
  • Print_ISBN
    0-7803-8557-8
  • Type

    conf

  • DOI
    10.1109/LEOS.2004.1363556
  • Filename
    1363556