Comparison of gm-boosted oscillators in silicon field effect transistor and silicon-germanium hetero-junction bipolar transistor technology

Author

Ussmueller, Thomas ; Seemann, Kay ; Weigel, Robert

Author_Institution

Inst. for Electron. Eng., Friedrich-Alexander Univ. of Erlangen-Nuremberg, Erlangen, Germany

fYear

2009

fDate

28-29 Sept. 2009

Firstpage

539

Lastpage

542

Abstract

This paper presents two g_m-boosted VCOs. One VCO is built with Si MOS field effect transitors. The second one is built with SiGe bipolar transistors. Both VCOs are designed to cover a large tuning range from 5.2 GHz to 5.9 GHz and to minimize the power dissipation. Measured results for both oscillators are shown. Finally the performance of both oscillators is compared and analyzed.

Keywords

CMOS analogue integrated circuits; Ge-Si alloys; MMIC; heterojunction bipolar transistors; microwave bipolar transistors; microwave field effect transistors; microwave oscillators; voltage-controlled oscillators; wide band gap semiconductors; CMOS analog integrated circuits; Microwave integrated circuits; SiGe; VCO; frequency 5.2 GHz to 5.9 GHz; g_m-boosted oscillators; heterojunction bipolar transistor technology; power dissipation; silicon MOS field effect transistor; voltage-controlled oscillators; FET integrated circuits; Field programmable gate arrays; Germanium silicon alloys; Microwave FET integrated circuits; Microwave integrated circuits; Microwave oscillators; Radiofrequency integrated circuits; Silicon germanium; Switches; Voltage-controlled oscillators; CMOS analog integrated circuits; Microwave FET oscillators; Microwave integrated circuits; Microwave oscillators; Monolithic integrated circuits; Voltage controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4749-7

Type

conf

Filename

5296430