Electrical and structural properties of low-temperature-grown In/sub 0.53/Ga/sub 0.47/As on GaAs using an InGaAlAs metamorphic buffer

Author

Jo, Seong June ; Ihn, Soo-Ghang ; Kim, Tae-Woo ; Yee, Ki-Ju ; Hwang, Moon-Seop ; Lee, Dong-Han ; Song, Jong-In

Author_Institution

Dept. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., South Korea

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

425

Lastpage

427

Abstract

Electrical and structural properties of low-temperature-grown In/sub 0.53/Ga/sub 0.47/As (LT-InGaAs) on GaAs using an InGaAlAs metamorphic buffer (M-buffer) were studied. Dependence of carrier lifetime of the LT-InGaAs on post thermal annealing was also investigated. Utilization of residual dislocation in the LT-InGaAs on the M-buffer was effective in reducing the carrier lifetime, producing the carrier lifetime of 2.14 ps that is comparable to that of the Be-doped LT-InGaAs.

Keywords

III-V semiconductors; aluminium compounds; annealing; buffer layers; carrier lifetime; dislocations; gallium arsenide; gallium compounds; indium compounds; GaAs; In/sub 0.53/Ga/sub 0.47/As; InGaAlAs; M-buffer; carrier lifetime; electrical properties; metamorphic buffer; post thermal annealing; residual dislocation; structural properties; Annealing; Charge carrier lifetime; Electron mobility; Gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Photoconductivity; Physics; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637246