Title :
Pulsed and CW N-Type Silicon Single-Drift Impatt Diodes for 140 GHz
Author :
Wenger, J. ; Freyer, J. ; Harth, W.
Abstract :
The drift-zone length and optimum doping density of 140 GHz Impatt diodes is evaluated from measurements of the breakdown voltage versus doping concentration. Pulsed and cw n-type single drift diodes were fabricated and the rf-performance was investigated. Relatively high output power levels of 1.6 W (pulsed) and 70 mW (cw) with efficiency values of 2.6 % and 3.2%, respectively, indicate a proper design. Improved repro ducibility can be achieved using a technology with beam-lead diodes and quartz ring packages.
Keywords :
Diodes; Doping; Frequency; Length measurement; Neodymium; Packaging; Power generation; Pulse measurements; Silicon; Space vector pulse width modulation;
Conference_Titel :
Microwave Conference, 1986. 16th European
Conference_Location :
Dublin, Ireland
DOI :
10.1109/EUMA.1986.334254
