Numerical methods for the high-frequency analysis of MEMS capacitive switches

Author

Vietzorreck, Larissa ; Coccetti, F. ; Chtchekatourov, V. ; Russer, P.

Author_Institution

Inst. fur Hochfrequenztech., Tech. Univ. Munchen, Germany

fYear

2000

fDate

28-28 April 2000

Firstpage

123

Lastpage

124

Abstract

In the present paper we analyze the high-frequency behaviour of a microelectromechanical capacitive switch by the transmission line matrix method (TLM) and by the method of lines (MoL). The numerical methods will be presented, especially the means which are necessary to avoid long calculation times and make the methods useful for an efficient design of the proposed structures. The obtained numerical results for the scattering parameters are compared with measurements in order to judge their accuracy.

Keywords

S-parameters; method of lines; micromechanical devices; semiconductor device models; semiconductor switches; transmission line matrix methods; MEMS capacitive switches; calculation times; high-frequency analysis; method of lines; scattering parameters; transmission line matrix method; Anisotropic magnetoresistance; Communication switching; Coplanar waveguides; Dielectric thin films; Electrodes; Micromechanical devices; Phased arrays; Propagation losses; Reflection; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2000. Digest of Papers. 2000 Topical Meeting on

Conference_Location

Garmisch, Germany

Print_ISBN

0-7803-6255-1

Type

conf

DOI

10.1109/SMIC.2000.844314

Filename

844314