DocumentCode :
2024820
Title :
Numerical methods for the high-frequency analysis of MEMS capacitive switches
Author :
Vietzorreck, Larissa ; Coccetti, F. ; Chtchekatourov, V. ; Russer, P.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Univ. Munchen, Germany
fYear :
2000
fDate :
28-28 April 2000
Firstpage :
123
Lastpage :
124
Abstract :
In the present paper we analyze the high-frequency behaviour of a microelectromechanical capacitive switch by the transmission line matrix method (TLM) and by the method of lines (MoL). The numerical methods will be presented, especially the means which are necessary to avoid long calculation times and make the methods useful for an efficient design of the proposed structures. The obtained numerical results for the scattering parameters are compared with measurements in order to judge their accuracy.
Keywords :
S-parameters; method of lines; micromechanical devices; semiconductor device models; semiconductor switches; transmission line matrix methods; MEMS capacitive switches; calculation times; high-frequency analysis; method of lines; scattering parameters; transmission line matrix method; Anisotropic magnetoresistance; Communication switching; Coplanar waveguides; Dielectric thin films; Electrodes; Micromechanical devices; Phased arrays; Propagation losses; Reflection; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2000. Digest of Papers. 2000 Topical Meeting on
Conference_Location :
Garmisch, Germany
Print_ISBN :
0-7803-6255-1
Type :
conf
DOI :
10.1109/SMIC.2000.844314
Filename :
844314
Link To Document :
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