Title :
A V band singly balanced diode mixer for space application
Author :
Florian, C. ; Scappaviva, F. ; Feudale, M. ; Monaco, V.A. ; Filicori, F.
Author_Institution :
DEIS, Bologna Univ., Italy
Abstract :
The paper describes the design of a V band single balanced mixer to be employed in the front end of an on-board receiver for space applications. The V band receiver is a demonstrator for the use of different monolithic processes and interconnection/assembly technologies in space applications at such high frequencies. The receiver front-end consists of a multi-stage LNA amplification followed by an image reject filter, the mixer and a frequency doubler for the local oscillator. All the chips are mounted over an LTTC substrate using bumps/hot vias technology. Chip to chip interconnection is provided by coplanar waveguide on LTTC. The mixer employs a rat race 180/spl deg/ hybrid to balance the local oscillator and a couple of Schottky diodes as mixing elements. The technology employed is a 0.15 /spl mu/m pHEMT process that offers diodes with a cut off frequency higher than 300 GHz. The choices made for the mixer type and topology starting from the system specifications are covered in the paper along with the actual description of the circuit design.
Keywords :
HEMT integrated circuits; Schottky diode mixers; frequency multipliers; integrated circuit interconnections; low noise amplifiers; millimetre wave filters; millimetre wave mixers; millimetre wave oscillators; network topology; Schottky diodes; V band single balanced diode mixer; chip to chip interconnection; circuit design; coplanar waveguide; frequency doubler; image reject filter; interconnection-assembly technologies; local oscillator; monolithic processes; multistage LNA amplification; onboard receiver; pHMET process; space application; Assembly; Circuit topology; Coplanar waveguides; Filters; Frequency; Integrated circuit interconnections; Local oscillators; PHEMTs; Schottky diodes; Space technology;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7