Pass transistor driving RC loads in nanoscale technologies

Author

Tzagkas, Dimitrios ; Varnavidou, Christina ; Pappas, Ilias ; Voudouris, Lyberis ; Nikolaidis, Spyridon ; Rjoub, Abdoul

Author_Institution

Dept. of Phys., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece

fYear

2012

fDate

25-28 March 2012

Firstpage

76

Lastpage

79

Abstract

In this paper the operation of the pass transistor driving RC loads is investigated for nanoscale technologies. The widely accepted CRC π-model is used for the representation of RC loads. The different operational conditions of the circuit are determined and the differential equations which describe its operation are solved analytically. Appropriate approximations are used for the current waveforms to simplify the modeling procedure without significant influence in the accuracy. The evaluation of the model is made through comparisons with HSpice simulation results and by using three different technologies: CMOS 65 nm, 32nm and 32 nm with high-k dielectric.

Keywords

CMOS integrated circuits; RC circuits; SPICE; circuit simulation; differential equations; driver circuits; high-k dielectric thin films; nanoelectronics; transistor circuits; CMOS; CRC model; HSpice simulation; circuit operational condition; current waveform; differential equation; high-k dielectric; nanoscale technology; pass transistor driving RC load; size 32 nm; size 65 nm; Accuracy; Capacitance; Integrated circuit modeling; Load modeling; Mathematical model; Semiconductor device modeling; Transistors; π-model; RC loads; modeling; operational analysis; pass transistor; timing simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrotechnical Conference (MELECON), 2012 16th IEEE Mediterranean

Conference_Location

Yasmine Hammamet

ISSN

2158-8473

Print_ISBN

978-1-4673-0782-6

Type

conf

DOI

10.1109/MELCON.2012.6196384

Filename

6196384