Title :
TLM characterization of planar microwave transformers for monolithic power amplifiers
Author :
Rebel, J. ; Russer, P.
Author_Institution :
Lehrstuhl fur Hochfrequenztech., Tech. Univ. Munchen, Germany
Abstract :
The time domain characterization of planar microwave transformers for monolithic RF power amplifiers using the SCN-TLM method is described in this paper. The primary objective of this study is to determine the influence of losses on the electrical properties of such transformers. For this a simplified model and a full model of the real transformer are investigated. We found that the principle loss mechanism originates from conductor losses of the windings. The influence of the lossy Si substrate can be neglected up to 5 GHz.
Keywords :
MMIC power amplifiers; UHF power amplifiers; high-frequency transformers; losses; time-domain analysis; transformer windings; transmission line matrix methods; 2 GHz; RF power amplifiers; SCN-TLM method; Si; TLM characterization; conductor losses; electrical properties; lossy Si substrate; model; monolithic power amplifiers; planar microwave transformers; time domain characterization; windings; Aluminum; Circuits; Gas insulated transmission lines; Lithography; Microwave amplifiers; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon; Transformers;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2000. Digest of Papers. 2000 Topical Meeting on
Conference_Location :
Garmisch, Germany
Print_ISBN :
0-7803-6255-1
DOI :
10.1109/SMIC.2000.844319
