DocumentCode :
2024987
Title :
Intermittent operating life results for different control strategies
Author :
Chen, Yuan ; Hou, Bo
Author_Institution :
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, The 5th Electronic Institute of MII, Guangzhou, China
fYear :
2015
fDate :
11-14 Aug. 2015
Firstpage :
1382
Lastpage :
1385
Abstract :
Intermittent operating life test is an important method to characterize the lifetime and package reliability of power semiconductor devices. The control strategy is a very important feature of the intermittent operating life test. Intermittent operating life tests with identical start condition but different control strategies (temperature control strategy and time control strategy) have been performed, which have been conducted on specially assembled test equipment with ultimate control of all test parameters. The test results under these two different control strategies are analyzed and discussed. Failure analysis is also used, to understand the failure mechanisms induced by intermittent operating life tests. The changes of thermal resistance with intermittent life cycle number are compared under two control strategies. The results show, that time control strategy is more severe than temperature control strategy. The lifetime of power devices is longer under temperature control strategy. And the thermal resistance increases relatively larger by time control strategy
Keywords :
Silicon; Stress; Temperature control; Thermal resistance; Intermittent Operating Life; Power Semiconductor Device; Temperature Control Strategy; Time Control Strategy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2015 16th International Conference on
Conference_Location :
Changsha, China
Type :
conf
DOI :
10.1109/ICEPT.2015.7236837
Filename :
7236837
Link To Document :
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