Title :
Ultra high IP3 passive GaAs FET mixers
Author :
Wentzel, Andreas ; Pienkowski, Dariusz ; Boeck, Georg
Author_Institution :
Microwave Eng., Technische Univ. Berlin, Germany
Abstract :
This paper describes single-balanced passive GaAs FET mixers with different balancing principles for the lower GHz range. The mixers achieve conversion losses of about 7 dB and input third-order intercept points (IIP3) of up to 44 dBm. Port isolation values of more than 70 dB have been achieved. Different balancing topologies, design process and results are being discussed.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; mixers (circuits); GaAs; balancing principles; input third-order intercept points; passive FET mixers; port isolation; Ferrites; Gallium arsenide; Linearity; Low pass filters; Microwave FETs; Mixers; PHEMTs; Radio frequency; Topology; Transformers;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
