Title :
Simulation of all-optical demultiplexing utilizing two-photon absorption in semiconductor devices for high-speed OTDM networks
Author :
Maguire, P.J. ; Barry, L.P.
Author_Institution :
Res. Inst. for Networks & Comm. Eng., Dublin City Univ., Ireland
Abstract :
The performance of a two-photon absorption (TPA) based demultiplexer in an OTDM communication system is modeled. The demultiplexer is evaluated by comparing the electrical BER of the demultiplexed and detected channel to the optical BER of the signal before the demultiplexer. An error-free demultiplexing of a 250 Gbit/s signal (25 × 10 Gbit/s channels) is shown, using a 30:1 control-to-signal peak power ratio, with a TPA device with a bandwidth of 20 GHz should be possible. The device that is fabricated for TPA is a GaAs/AlAs PIN microcavity photodetector grown on a GaAs substrate.
Keywords :
aluminium compounds; demultiplexing; demultiplexing equipment; error statistics; gallium arsenide; microcavities; optical fibre networks; p-i-n photodiodes; photodetectors; telecommunication channels; time division multiplexing; two-photon processes; 10 Gbit/s; 20 GHz; 250 Gbit/s; GaAs; GaAs-AlAs; GaAs/AlAs PIN microcavity photodetector; all-optical demultiplexing; control-to-signal peak power ratio; electrical BER; high-speed OTDM networks; optical BER; two-photon absorption; Absorption; Bandwidth; Bit error rate; Demultiplexing; Error correction; Gallium arsenide; High speed optical techniques; Microcavities; Power system modeling; Semiconductor devices;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363572
