Temperature dependence of silicon and silicon carbide power devices: An experimental analysis

Author

Amairi, Mahbouba ; Mtimet, Sameh ; Ben Salah, Tarek ; Morel, Hervé

Author_Institution

L.S.E., Univ. of Tunis El Manar, Tunis Le Bélvédère, Tunisia

fYear

2012

fDate

25-28 March 2012

Firstpage

97

Lastpage

101

Abstract

A comparative experimental study between silicon (Si) and silicon carbide (SiC) power devices is presented. This study focuses on experiment results of forward, reverse and transient characteristics. Three different diodes technologies are tested: PiN, schottky and Merged PiN Schottky (MPS) diodes. Silicon carbide power devices are tested at 25°C-200°C range. However, the silicon devices are tested up to 175°C because of the Si temperature limitation. Experimental results show that silicon carbide MPS diode offers superior temperature performance over silicon PiN diodes during transient mode.

Keywords

Schottky diodes; p-i-n diodes; power semiconductor diodes; silicon compounds; temperature; MPS diode; SiC; diodes technology; merged PiN Schottky diode; silicon carbide power device; temperature 25 C to 200 C; temperature dependence; temperature limitation; transient mode; Leakage current; Schottky diodes; Silicon; Silicon carbide; Temperature; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrotechnical Conference (MELECON), 2012 16th IEEE Mediterranean

Conference_Location

Yasmine Hammamet

ISSN

2158-8473

Print_ISBN

978-1-4673-0782-6

Type

conf

DOI

10.1109/MELCON.2012.6196389

Filename

6196389