Title :
0.1 /spl mu/m T-gate p-type Ge/SiGe MODFETs
Author :
Hock, G. ; Kab, N. ; Hackbarth, T. ; Konig, U. ; Kohn, E.
Author_Institution :
Dept. of Electron. Devices & Circuits, Albert-Einstein-Alles, Ulm, Germany
Abstract :
The DC and RF performance of a 0.1 /spl mu/m gate-length p-type modulation-doped field-effect transistor (MODFET) is reported. The hole channel consists of a compressively strained Ge layer grown on a relaxed Si/sub 0.4/Ge/sub 0.6/ buffer on a Si substrate. The combination of a high hole mobility of 1400 cm/sup 2//Vs, a high sheet carrier density of 3/spl times/10/sup 12/ cm/sup -2/, and a short gate length of about 100 nm result in a unity current gain frequency (f/sub t/) of 55 GHz and a maximum frequency of oscillation (f/sub max/) of 88 GHz.
Keywords :
Ge-Si alloys; elemental semiconductors; germanium; high electron mobility transistors; microwave field effect transistors; millimetre wave field effect transistors; semiconductor materials; 0.1 micron; 55 GHz; 88 GHz; DC performance; Ge-Si/sub 0.4/Ge/sub 0.6/; HEMT; RF performance; Si; Si substrate; T-gate MODFETs; compressively strained Ge layer; field-effect transistor; hole channel; hole mobility; modulation-doped FET; p-type Ge/SiGe MODFETs; relaxed SiGe buffer; sheet carrier density; short gate length; Capacitive sensors; Charge carrier density; Charge carrier processes; Epitaxial layers; FETs; Germanium silicon alloys; HEMTs; MODFETs; Silicon germanium; Substrates;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2000. Digest of Papers. 2000 Topical Meeting on
Conference_Location :
Garmisch, Germany
Print_ISBN :
0-7803-6255-1
DOI :
10.1109/SMIC.2000.844321
