Title :
60 GHz GaAs MMIC mixers with integrated LO buffer
Author :
Maas, A.P.M. ; Hoogland, J.A.
Author_Institution :
TNO Defence, Security & Safety, Netherlands
Abstract :
Using the 0.15 /spl mu/m GaAs mHEMT process from WIN semiconductors, two 60 GHz down-conversion mixers have been designed, processed and measured. Both designs include a LO buffer amplifier to allow for a reduced external LO power level. With an LO power of +10 dBm, the measured RF input match is better than -15 dB at 60 GHz and the conversion loss is below 8 dB at 2 GHz intermediate frequency.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC mixers; buffer circuits; gallium arsenide; semiconductor device models; 2 GHz; 60 GHz; GaAs; MMIC mixers; WIN semiconductors; down-conversion mixers; integrated LO buffer amplifier; mHEMT process; Frequency measurement; Gallium arsenide; Loss measurement; MMICs; Power amplifiers; Power measurement; Process design; Radio frequency; Radiofrequency amplifiers; mHEMTs;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
